Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin; Ming Chi Wu; Chun Chieh Lin; Tseung-Yuen Tseng

doi:10.1080/00150190902870101

Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin, Ming Chi Wu, Chun Chieh Lin, Tseung-Yuen Tseng^*

^*此作品的通信作者

研究成果: Conference article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

原文	English
頁（從 - 到）	30-37
頁數	8
期刊	Ferroelectrics
卷	380
發行號	1 PART 1
DOIs	https://doi.org/10.1080/00150190902870101
出版狀態	Published - 1 12月 2009
事件	6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan 持續時間: 2 8月 2008 → 6 8月 2008

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10.1080/00150190902870101

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title = "Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film",

abstract = "Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.",

keywords = "Bismuth titanate oxide (BTO), RRAM, Sol-gel method",

author = "Lin, {Meng Han} and Wu, {Ming Chi} and Lin, {Chun Chieh} and Tseung-Yuen Tseng",

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T1 - Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

AU - Lin, Meng Han

AU - Wu, Ming Chi

AU - Lin, Chun Chieh

AU - Tseng, Tseung-Yuen

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

AB - Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

KW - Bismuth titanate oxide (BTO)

KW - RRAM

KW - Sol-gel method

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JO - Ferroelectrics

JF - Ferroelectrics

SN - 0015-0193

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Y2 - 2 August 2008 through 6 August 2008

ER -

Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

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