摘要
Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.
原文 | English |
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頁(從 - 到) | 30-37 |
頁數 | 8 |
期刊 | Ferroelectrics |
卷 | 380 |
發行號 | 1 PART 1 |
DOIs | |
出版狀態 | Published - 1 12月 2009 |
事件 | 6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan 持續時間: 2 8月 2008 → 6 8月 2008 |