Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin, Ming Chi Wu, Chun Chieh Lin, Tseung-Yuen Tseng*

*此作品的通信作者

    研究成果: Conference article同行評審

    8 引文 斯高帕斯(Scopus)

    摘要

    Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

    原文English
    頁(從 - 到)30-37
    頁數8
    期刊Ferroelectrics
    380
    發行號1 PART 1
    DOIs
    出版狀態Published - 1 12月 2009
    事件6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan
    持續時間: 2 8月 20086 8月 2008

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