Nonpolar and semipolar LEDs

Y. R. Wu*, C. Y. Huang, Y. Zhao, J. S. Speck

*此作品的通信作者

研究成果: Chapter同行評審

3 引文 斯高帕斯(Scopus)

摘要

A polarization-induced electric field fundamentally limits nitride-based LEDs grown on the c-plane. Nonpolar and semipolar LEDs have potential for superior performance through high internal quantum efficiency over a wide spectral region and low efficiency droop due to improved carrier transport and high compositional homogeneity. Nonpolar and semipolar LEDs possess unique electroluminescent characteristics such as polarized light emission and reduced wavelength shift due to the lift of degeneracy in the conduction band and mitigated quantum-confined Stark effect. In epitaxial growth, the surface morphology and defect generation mechanism on nonpolar and semipolar planes differ from those on the c-plane due to the anisotropic surface geometry and tilted slip systems. LED chips are designed to enhance the light extraction efficiency of nonpolar and semipolar LEDs grown on free-standing GaN substrates.

原文English
主出版物標題Nitride Semiconductor Light-Emitting Diodes (LEDs)
主出版物子標題Materials, Technologies and Applications
發行者Elsevier Ltd
頁面250-275
頁數26
ISBN(列印)9780857095077
DOIs
出版狀態Published - 12月 2013

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