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Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency
Chi Ling Lee
*
, Shih Chang Lee,
Wei-I Lee
*
此作品的通信作者
電子物理學系
研究成果
:
Article
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同行評審
13
引文 斯高帕斯(Scopus)
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深入研究「Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency」主題。共同形成了獨特的指紋。
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Keyphrases
Light-emitting Diodes
100%
Regrowth
100%
Random Mask
100%
P-GaN
28%
Metal-organic Chemical Vapor Deposition (MOCVD)
14%
Dry Etching
14%
Inductively Coupled Plasma
14%
Multiple Quantum Wells
14%
Leakage Current
14%
Growth Conditions
14%
Diode Structures
14%
Wet Etching
14%
Chemical Vapor Deposition Growth
14%
Photo-enhanced
14%
External Efficiency
14%
Chemistry
Metallorganic Chemical Vapor Deposition
100%
Inductively Coupled Plasma
100%
Leakage Current
100%
Minoxidil
100%
Engineering
Light-Emitting Diode
100%
Chemical Vapor Deposition
14%
Vapor Deposition
14%
Quantum Well
14%
Growth Condition
14%
Inductively Coupled Plasma
14%
External Efficiency
14%
Material Science
Light-Emitting Diode
100%
Density
14%
Chemical Vapor Deposition
14%
Quantum Well
14%
Chemical Engineering
Metallorganic Chemical Vapor Deposition
100%