Noncontact Remote Doping for High-performance Two-dimensional Electronics

Po Heng Pao*, Ren Hao Cheng, Yi Hsiu Huang, Yu Ying Yang, Tzu Hsien Sang, Chia Ming Tsai, Chao Hsin Chien*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this study, a remote doping (RD) method is proposed in which SiOx is used as the remote doping agent without directly contacting transition metal dichalcogenide (TMD) materials. It is found that a doping density as high as 1.4 × 1013 cm-2 without reducing the mobility of the doped materials can be achieved and even after 1 month later the doping concentration remained as high as 1.2 × 1013 cm-2. We observe that SiOx is able to dope several popular 2D transition metal dichalcogenides, including MoS2, WS2, and WSe2. Notably, it possesses a lower k value than that of stoichiometric silicon dioxide oxide, which is very attractive for spacer doping in terms of the perspective of circuit operation. In our experiments, MoS2 and WS2 underlap top-gate devices exhibited 10× and 200× increases in their on-currents, respectively, after being doped with SiOx. These results indicate that SiOx doping can be implemented to manufacture high-performance 2D devices.

原文English
主出版物標題Proceedings of 2023 IEEE 15th International Conference on ASIC, ASICON 2023
編輯Fan Ye, Ting-Ao Tang
發行者IEEE Computer Society
ISBN(電子)9798350312980
DOIs
出版狀態Published - 2023
事件15th IEEE International Conference on ASIC, ASICON 2023 - Nanjing, China
持續時間: 24 10月 202327 10月 2023

出版系列

名字Proceedings of International Conference on ASIC
ISSN(列印)2162-7541
ISSN(電子)2162-755X

Conference

Conference15th IEEE International Conference on ASIC, ASICON 2023
國家/地區China
城市Nanjing
期間24/10/2327/10/23

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