Non-polar a-plane GaN grown on LaAlO3 (0 0 1) substrate by pulsed laser deposition

Yen Teng Ho*, Mei Hui Liang, Feng Ke Hsiao, Wei Lin Wang, Chun Yen Peng, Wei Da Chen, Wei-I Lee, Li Chang

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Non-polar (1 1 2̄ 0) GaN has been successfully grown on (0 0 1) LaAlO3 (LAO) substrate by pulsed laser deposition method. The nitrogen plasma is essential to grow pure a-plane GaN films. The insertion of a ZnO buffer layer improves the quality of GaN thin film as shown by X-ray diffraction. Reflection high energy electron diffraction and cross-sectional transmission electron microscopy with selected area diffraction reveal two types of a-plane GaN domains perpendicular to each other in orientation relationships of [0 0 0 1]GaN∥[1 1̄ 0]LAO and [1 1̄ 00]GaN∥[1 1̄ 0]LAO.

原文English
頁(從 - 到)1614-1618
頁數5
期刊Journal of Crystal Growth
310
發行號7-9
DOIs
出版狀態Published - 1 4月 2008

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