Non-contact electrical characterization of high-dielectric-constant (high-k) materials

Pui Yee Hung; Brendan Foran; Tuo-Hung Hou; Alain Diebold; Xiafang Zhang; Chris Oroshiba

Non-contact electrical characterization of high-dielectric-constant (high-k) materials

Pui Yee Hung^*, Brendan Foran, Tuo-Hung Hou, Alain Diebold, Xiafang Zhang, Chris Oroshiba

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

摘要

This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

原文	English
頁面	219-225
頁數	7
出版狀態	Published - 2 10月 2003
事件	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, 美國持續時間: 20 10月 2002 → 24 10月 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
國家/地區	美國
城市	Salt Lake City, UT
期間	20/10/02 → 24/10/02

其它文件與鏈接

Link to publication in Scopus

引用此

Hung, P. Y., Foran, B., Hou, T.-H., Diebold, A., Zhang, X., & Oroshiba, C. (2003). Non-contact electrical characterization of high-dielectric-constant (high-k) materials. 219-225. 論文發表於 Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, 美國.

Hung, Pui Yee ; Foran, Brendan ; Hou, Tuo-Hung 等. / Non-contact electrical characterization of high-dielectric-constant (high-k) materials. 論文發表於 Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, 美國.7 p.

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title = "Non-contact electrical characterization of high-dielectric-constant (high-k) materials",

abstract = "This study explores the application of non-contact electrical characterization (using Quantox{\texttrademark}) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox{\texttrademark} with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox{\texttrademark}, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox{\texttrademark} correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.",

author = "Hung, {Pui Yee} and Brendan Foran and Tuo-Hung Hou and Alain Diebold and Xiafang Zhang and Chris Oroshiba",

year = "2003",

month = oct,

day = "2",

language = "English",

pages = "219--225",

note = "Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues ; Conference date: 20-10-2002 Through 24-10-2002",

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Hung, PY, Foran, B, Hou, T-H, Diebold, A, Zhang, X & Oroshiba, C 2003, 'Non-contact electrical characterization of high-dielectric-constant (high-k) materials', 論文發表於 Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, 美國, 20/10/02 - 24/10/02 頁 219-225.

Non-contact electrical characterization of high-dielectric-constant (high-k) materials. / Hung, Pui Yee; Foran, Brendan; Hou, Tuo-Hung 等.
2003. 219-225 論文發表於 Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, 美國.

研究成果: Paper › 同行評審

TY - CONF

T1 - Non-contact electrical characterization of high-dielectric-constant (high-k) materials

AU - Hung, Pui Yee

AU - Foran, Brendan

AU - Hou, Tuo-Hung

AU - Diebold, Alain

AU - Zhang, Xiafang

AU - Oroshiba, Chris

PY - 2003/10/2

Y1 - 2003/10/2

N2 - This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

AB - This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

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M3 - Paper

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T2 - Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues

Y2 - 20 October 2002 through 24 October 2002

ER -

Hung PY, Foran B, Hou TH, Diebold A, Zhang X, Oroshiba C. Non-contact electrical characterization of high-dielectric-constant (high-k) materials. 2003. 論文發表於 Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, 美國.

Non-contact electrical characterization of high-dielectric-constant (high-k) materials

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