Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.
|頁（從 - 到）||38-40|
|期刊||Journal of Alloys and Compounds|
|出版狀態||Published - 5 3月 2012|