NO gas sensor based on ZnGa 2 O 4 epilayer grown by metalorganic chemical vapor deposition

Min Ru Wu, Wei Zhong Li, Chun Yi Tung, Chiung Yi Huang, Yi Hung Chiang, Po Liang Liu, Ray-Hua Horng*

*此作品的通信作者

研究成果: Article同行評審

66 引文 斯高帕斯(Scopus)

摘要

A gas sensor based on a ZnGa 2 O 4 (ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 °C to 300 °C is investigated in this study. This sensor shows great sensing properties at 300 °C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO 2 (500 ppb), SO 2 (125 ppm), CO (125 ppm), and CO 2 (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.

原文English
文章編號7459
期刊Scientific reports
9
發行號1
DOIs
出版狀態Published - 1 12月 2019

指紋

深入研究「NO gas sensor based on ZnGa 2 O 4 epilayer grown by metalorganic chemical vapor deposition」主題。共同形成了獨特的指紋。

引用此