NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

研究成果: Conference contribution同行評審

摘要

In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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