NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen; Kuo Yu Hsiang; Min Hung Lee; Pin Su

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

研究成果: Conference contribution › 同行評審

摘要

In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

原文	English
主出版物標題	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951
出版狀態	Published - 2023
事件	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, 台灣持續時間: 17 4月 2023 → 20 4月 2023

出版系列

名字	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區	台灣
城市	Hsinchu
期間	17/04/23 → 20/04/23

存取文件

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

其它文件與鏈接

Link to publication in Scopus

引用此

Chen, Y. C., Hsiang, K. Y., Lee, M. H., & Su, P. (2023). NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

Chen, Yu Chen ; Hsiang, Kuo Yu ; Lee, Min Hung 等. / NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

@inproceedings{138c20b4e77b437a951f4cac081900d6,

title = "NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides",

abstract = "In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.",

author = "Chen, {Yu Chen} and Hsiang, {Kuo Yu} and Lee, {Min Hung} and Pin Su",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

year = "2023",

doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951",

language = "English",

series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

address = "美國",

}

Chen, YC, Hsiang, KY, Lee, MH & Su, P 2023, NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, 台灣, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides. / Chen, Yu Chen; Hsiang, Kuo Yu; Lee, Min Hung 等.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

AU - Chen, Yu Chen

AU - Hsiang, Kuo Yu

AU - Lee, Min Hung

AU - Su, Pin

PY - 2023

Y1 - 2023

N2 - In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

AB - In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

UR - http://www.scopus.com/inward/record.url?scp=85162943654&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

DO - 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

M3 - Conference contribution

AN - SCOPUS:85162943654

T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023

Y2 - 17 April 2023 through 20 April 2023

ER -

Chen YC, Hsiang KY, Lee MH, Su P. NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951

NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

摘要

出版系列

Conference

存取文件

其它文件與鏈接

指紋

引用此