Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu; Yi Teh Chou; Li Feng Teng; Fu Hai Li; Han Ping Shieh

doi:10.1063/1.3551537

Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu^*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Han Ping Shieh

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

88 引文斯高帕斯（Scopus）

摘要

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

原文	English
文章編號	052102
期刊	Applied Physics Letters
卷	98
發行號	5
DOIs	https://doi.org/10.1063/1.3551537
出版狀態	Published - 31 1月 2011

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10.1063/1.3551537

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title = "Nitrogenated amorphous InGaZnO thin film transistor",

abstract = "This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Teng, {Li Feng} and Li, {Fu Hai} and Shieh, {Han Ping}",

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AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Teng, Li Feng

AU - Li, Fu Hai

AU - Shieh, Han Ping

PY - 2011/1/31

Y1 - 2011/1/31

N2 - This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

AB - This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

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JO - Applied Physics Letters

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Nitrogenated amorphous InGaZnO thin film transistor

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