@inproceedings{e759ea9264984958ad62e2ab78a897ca,
title = "Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric",
abstract = "Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.",
keywords = "Boron, Degradation, Dielectrics, Hot carriers, Leakage current, MOSFETs, Nitrogen, Plasmas, Tunneling, Voltage",
author = "Chen, {Ching Wei} and Chao-Hsin Chien and Ou, {Shih Chich} and Perng, {Tsu Hsiu} and Lee, {Da Yuan} and Chen, {Yi Cheng} and Horng-Chih Lin and Huang, {Tiao Yuan} and Chang, {Chun Yen}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/IWGI.2003.159183",
language = "English",
series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "54--57",
booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",
address = "United States",
note = "International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",
}