Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs with High Peak gmand Reduced Leakage Current

Hua Lun Ko, Quang Ho Luc, Ping Huang, Si Meng Chen, Jing Yuan Wu, Che Wei Hsu, Nhan Ai Tran, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance, gm, of 2727 μS/μm which is among the highest values reported for In0.53Ga0.47As FinFETs. In addition, subthreshold performances are improved with leakage current (IOFF) of 1.13 × 10-4 μA/μm, subthreshold swing (SS) of 78 mV/dec, drain-induced barrier lowering (DIBL) of 55 mV/V, and equivalent oxide thickness (EOT) ~0.8 nm. These excellent results are attributed to the strong electrostatic control and the superior high-κ/InGaAs interface quality achieved by scaled fin width and RP passivation.

原文English
頁(從 - 到)495-499
頁數5
期刊IEEE Transactions on Electron Devices
69
發行號2
DOIs
出版狀態Published - 1 2月 2022

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