Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs

Jiann Heng Chen*, Tan Fu Lei, Chia Lin Chen, Tien-Sheng Chao, Ying Wen, Kuag Ting Chen

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor (n-MOSFET) with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation.

原文English
頁(從 - 到)G63-G69
頁數8
期刊Journal of the Electrochemical Society
149
發行號1
DOIs
出版狀態Published - 1 1月 2002

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