Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

GongTan Li; Bo-Ru Yang; Chuan Liu; Chia-Yu Lee; Yuan-Chun Wu; Po-Yen Lu; Shaozhi Deng; Han-Ping Shieh; Ningsheng Xu

doi:10.1109/LED.2016.2548020

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

GongTan Li, Bo-Ru Yang^*, Chuan Liu^*, Chia-Yu Lee, Yuan-Chun Wu, Po-Yen Lu, Shaozhi Deng, Han-Ping Shieh, Ningsheng Xu

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

原文	English
頁（從 - 到）	607-610
期刊	Ieee Electron Device Letters
卷	37
發行號	5
DOIs	https://doi.org/10.1109/LED.2016.2548020
出版狀態	Published - 5月 2016

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10.1109/LED.2016.2548020

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@article{5de0a0824c21428883f513be0d5c06cb,

title = "Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations",

abstract = "The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.",

keywords = "InZnSnO; thin-film transistors; NGBS; nitrogen doping",

author = "GongTan Li and Bo-Ru Yang and Chuan Liu and Chia-Yu Lee and Yuan-Chun Wu and Po-Yen Lu and Shaozhi Deng and Han-Ping Shieh and Ningsheng Xu",

year = "2016",

month = may,

doi = "10.1109/LED.2016.2548020",

language = "English",

volume = "37",

pages = "607--610",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

AU - Li, GongTan

AU - Yang, Bo-Ru

AU - Liu, Chuan

AU - Lee, Chia-Yu

AU - Wu, Yuan-Chun

AU - Lu, Po-Yen

AU - Deng, Shaozhi

AU - Shieh, Han-Ping

AU - Xu, Ningsheng

PY - 2016/5

Y1 - 2016/5

N2 - The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

AB - The threshold voltage shift (Delta V-th) in amorphous InZnSnO thin-film transistors (a-IZTO TFTs) during negative gate-bias stress (NGBS) is significantly improved by nitrogen doping. Numerous N-In bonds eliminate donorlike subgap states near the Fermi level, which improve stability during stress but degrade electron mobility. We developed tandem TFTs with an a-IZTO:N layer on top of an a-IZTO layer, in which mobility reaches 31.76 +/- 0.81 cm(2)/Vs and the reliability is improved. Especially, Delta V-th in NGBS is reduced by 80% for pristine a-IZTO devices. This simple but an effective method achieves fast and reliable operation in the a-IZTO TFTs.

KW - InZnSnO; thin-film transistors; NGBS; nitrogen doping

U2 - 10.1109/LED.2016.2548020

DO - 10.1109/LED.2016.2548020

M3 - Article

SN - 0741-3106

VL - 37

SP - 607

EP - 610

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 5

ER -

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors With a Tandem Structure for High-Mobility and Reliable Operations

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