Nitridization of the stacked poly-si gate to suppress the boron penetration in pMOS

Yung Lin Hao*, Chao Sung Lai, Chung Lee Lcn, Tan Fu Lei, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

NH3 -nitridation to create nitrogen-rich layers inbetween the stacked layers of the poly-Si gate for pMOS application is proposed and demonstrated. Due to the blocking of fluorine diffusion in the poly-Si gate by the nitrogen-rich layers, the amount of fluorine in the gate oxide, consequently, the fluorine enhancement on boron penetration is reduced. The negative effects of the NH3 -nitridized oxide were not found in this work. Moreover, this nitridized stacked poly-Si gate improves significantly the electrical characteristics of the gate oxide as a result of the indirect and slight nitridation at the gate oxide.

原文English
頁(從 - 到)1161-1165
頁數5
期刊IEEE Transactions on Electron Devices
43
發行號7
DOIs
出版狀態Published - 1 12月 1996

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