Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Cheng-Huang Kuo; S. J. Chang; Y. K. Su; L. W. Wu; J. K. Sheu; T. C. Wen; W. C. Lai; J. M. Tsai; S. C. Chen

doi:10.1007/s11664-003-0169-0

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Cheng-Huang Kuo^*, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, S. C. Chen

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The In_0.05Ga_0.95N/GaN, In_0.05Ga_0.95N/Al_0.01Ga_0.9N, and In_0.05Ga_0.95N/Al_0.18Ga_0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al_0.1Ga_0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al_0.1Ga_0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al_0.18Ga_0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

原文	English
頁（從 - 到）	415-418
頁數	4
期刊	Journal of Electronic Materials
卷	32
發行號	5
DOIs	https://doi.org/10.1007/s11664-003-0169-0
出版狀態	Published - 1 1月 2003

存取文件

10.1007/s11664-003-0169-0

其它文件與鏈接

Link to publication in Scopus

引用此

@article{48805d8d77d64882a864e83e3f347ea2,

title = "Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers",

abstract = "The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.",

keywords = "AlGaN, LED, MOCVD, MQW",

author = "Cheng-Huang Kuo and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Sheu, {J. K.} and Wen, {T. C.} and Lai, {W. C.} and Tsai, {J. M.} and Chen, {S. C.}",

year = "2003",

month = jan,

day = "1",

doi = "10.1007/s11664-003-0169-0",

language = "English",

volume = "32",

pages = "415--418",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Sheu, J. K.

AU - Wen, T. C.

AU - Lai, W. C.

AU - Tsai, J. M.

AU - Chen, S. C.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

AB - The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

KW - AlGaN

KW - LED

KW - MOCVD

KW - MQW

UR - http://www.scopus.com/inward/record.url?scp=0038664225&partnerID=8YFLogxK

U2 - 10.1007/s11664-003-0169-0

DO - 10.1007/s11664-003-0169-0

M3 - Article

AN - SCOPUS:0038664225

SN - 0361-5235

VL - 32

SP - 415

EP - 418

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

摘要

存取文件

其它文件與鏈接

指紋

引用此