Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Cheng-Huang Kuo; H. C. Feng; C. W. Kuo; C. M. Chen; L. W. Wu; G. C. Chi

doi:10.1063/1.2720347

Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Cheng-Huang Kuo^*
, H. C. Feng
, C. W. Kuo
, C. M. Chen
, L. W. Wu
, G. C. Chi

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

摘要

This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.

原文	English
文章編號	142115
期刊	Applied Physics Letters
卷	90
發行號	14
DOIs	https://doi.org/10.1063/1.2720347
出版狀態	Published - 2007

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10.1063/1.2720347

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abstract = "This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.",

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AU - Wu, L. W.

AU - Chi, G. C.

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AB - This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.

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DO - 10.1063/1.2720347

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Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

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