Nitride-based near-ultraviolet LEDs with an ITO transparent contact

Cheng-Huang Kuo; S. J. Chang; Y. K. Su; R. W. Chuang; C. S. Chang; L. W. Wu; W. C. Lai; J. F. Chen; J. K. Sheu; H. M. Lo; J. M. Tsai

doi:10.1016/j.mseb.2003.09.018

Nitride-based near-ultraviolet LEDs with an ITO transparent contact

Cheng-Huang Kuo, S. J. Chang^*, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, J. M. Tsai

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

64 引文斯高帕斯（Scopus）

摘要

Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n⁺-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In_0.05Ga_0.95N/Al_0.1Ga_0.9N light emitting diodes (LEDs). It was found that ITO on n⁺-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10^-3Ωcm² specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n⁺-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n⁺-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n⁺-SPS upper contact.

原文	English
頁（從 - 到）	69-72
頁數	4
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	106
發行號	1
DOIs	https://doi.org/10.1016/j.mseb.2003.09.018
出版狀態	Published - 15 1月 2004

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@article{93088f2e986245b7adc45b14048e238d,

title = "Nitride-based near-ultraviolet LEDs with an ITO transparent contact",

abstract = "Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10-3Ωcm2 specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.",

keywords = "InGaN/AlGaN LED, ITO, Short-period superlattice (SPS)",

author = "Cheng-Huang Kuo and Chang, {S. J.} and Su, {Y. K.} and Chuang, {R. W.} and Chang, {C. S.} and Wu, {L. W.} and Lai, {W. C.} and Chen, {J. F.} and Sheu, {J. K.} and Lo, {H. M.} and Tsai, {J. M.}",

year = "2004",

month = jan,

day = "15",

doi = "10.1016/j.mseb.2003.09.018",

language = "English",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Nitride-based near-ultraviolet LEDs with an ITO transparent contact

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Chang, C. S.

AU - Wu, L. W.

AU - Lai, W. C.

AU - Chen, J. F.

AU - Sheu, J. K.

AU - Lo, H. M.

AU - Tsai, J. M.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10-3Ωcm2 specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.

AB - Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10-3Ωcm2 specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.

KW - InGaN/AlGaN LED

KW - ITO

KW - Short-period superlattice (SPS)

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U2 - 10.1016/j.mseb.2003.09.018

DO - 10.1016/j.mseb.2003.09.018

M3 - Article

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SN - 0921-5107

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SP - 69

EP - 72

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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ER -

Nitride-based near-ultraviolet LEDs with an ITO transparent contact

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