Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

Cheng-Huang Kuo; S. J. Chang; Y. K. Su; L. W. Wu; J. F. Chen; J. K. Sheu; J. M. Tsai

doi:10.1109/TED.2003.809435

Nitride-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice tunneling contact layer

Cheng-Huang Kuo^*, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu, J. M. Tsai

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The electrical properties of Si-doped n⁺-In_0.23Ga_0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n⁺-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

原文	English
頁（從 - 到）	535-537
頁數	3
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	2
DOIs	https://doi.org/10.1109/TED.2003.809435
出版狀態	Published - 1 2月 2003

存取文件

10.1109/TED.2003.809435

其它文件與鏈接

Link to publication in Scopus

引用此

@article{ff92fe2e65cf4a5ca6255e0805b5581c,

title = "Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer",

abstract = "The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.",

keywords = "Hall measurement, InGaN/GaN, LED, SPS, Tunneling contact",

author = "Cheng-Huang Kuo and Chang, {S. J.} and Su, {Y. K.} and Wu, {L. W.} and Chen, {J. F.} and Sheu, {J. K.} and Tsai, {J. M.}",

year = "2003",

month = feb,

day = "1",

doi = "10.1109/TED.2003.809435",

language = "English",

volume = "50",

pages = "535--537",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

AU - Su, Y. K.

AU - Wu, L. W.

AU - Chen, J. F.

AU - Sheu, J. K.

AU - Tsai, J. M.

PY - 2003/2/1

Y1 - 2003/2/1

N2 - The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

AB - The electrical properties of Si-doped n+-In0.23Ga0.77N/GaN SPS structure were investigated and compared with conventional Mg-doped GaN contact layer. Temperature depend Hall measurement showed that such a SPS structure exhibits a high sheet electron concentration. It was found that we could reduce the 20 mA LED forward voltage from 3.78 V to 2.94 V and also reduce the series resistance of the LED from 41 Ω to 10 Ω by introducing such an n+-InGaN/GaN SPS top contact. It was also found that we could improve the LED lifetime by such a SPS structure.

KW - Hall measurement

KW - InGaN/GaN

KW - LED

KW - SPS

KW - Tunneling contact

UR - http://www.scopus.com/inward/record.url?scp=0038056269&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.809435

DO - 10.1109/TED.2003.809435

M3 - Article

AN - SCOPUS:0038056269

SN - 0018-9383

VL - 50

SP - 535

EP - 537

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 2

ER -

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

摘要

存取文件

其它文件與鏈接

指紋

引用此

Nitride-based light emitting diodes with Si-doped In_0.23Ga_0.77N/GaN short period superlattice tunneling contact layer