Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Cheng-Huang Kuo; S. J. Chang; G. C. Chi; K. T. Lam; Y. S. Sun

doi:10.1002/pssc.200565177

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

Cheng-Huang Kuo, S. J. Chang^*, G. C. Chi, K. T. Lam, Y. S. Sun

^*此作品的通信作者

照明與能源光電研究所

研究成果: Conference article › 同行評審

摘要

We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

原文	English
頁（從 - 到）	2153-2155
頁數	3
期刊	Physica Status Solidi (C) Current Topics in Solid State Physics
卷	3
DOIs	https://doi.org/10.1002/pssc.200565177
出版狀態	Published - 31 7月 2006
事件	6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany 持續時間: 28 8月 2005 → 2 9月 2005

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10.1002/pssc.200565177

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@article{42159c6fe70d4068b3a3afd780b351dd,

title = "Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers",

abstract = "We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.",

author = "Cheng-Huang Kuo and Chang, {S. J.} and Chi, {G. C.} and Lam, {K. T.} and Sun, {Y. S.}",

year = "2006",

month = jul,

day = "31",

doi = "10.1002/pssc.200565177",

language = "English",

volume = "3",

pages = "2153--2155",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

note = "6th International Conference on Nitride Semiconductors, ICNS-6 ; Conference date: 28-08-2005 Through 02-09-2005",

}

TY - JOUR

T1 - Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

AU - Kuo, Cheng-Huang

AU - Chang, S. J.

AU - Chi, G. C.

AU - Lam, K. T.

AU - Sun, Y. S.

PY - 2006/7/31

Y1 - 2006/7/31

N2 - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have demonstrated bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

UR - http://www.scopus.com/inward/record.url?scp=33746363843&partnerID=8YFLogxK

U2 - 10.1002/pssc.200565177

DO - 10.1002/pssc.200565177

M3 - Conference article

AN - SCOPUS:33746363843

SN - 1862-6351

VL - 3

SP - 2153

EP - 2155

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

T2 - 6th International Conference on Nitride Semiconductors, ICNS-6

Y2 - 28 August 2005 through 2 September 2005

ER -

Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers

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