@inproceedings{db3ae57756d4436b92673033f21e9556,
title = "Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures",
abstract = "We have prepared bulk p-AlInGaN layers and light emitting diodes (LEDs) with p-AlInGaN surface layers by metalorganic chemical vapor deposition (MOCVD). It was found that surfaces of the LEDs with p-AlInGaN layers were rough with high density of hexagonal pits. It was also found that pit width and pit density depend on the growth temperature of the p-AlInGaN layer. Furthermore, it was found that we can achieve 62% enhancement in output intensity from the LED with 820°C p-AlInGaN cap layer without increasing the LED operation voltage.",
keywords = "InGaN/GaN, LED, V-shap pits, p-AlInGaN",
author = "Kuo, {C. W.} and Chen, {C. M.} and Cheng-Huang Kuo and Chi, {G. C.}",
year = "2007",
month = may,
day = "24",
doi = "10.1117/12.700303",
language = "English",
isbn = "0819465860",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices II",
note = "Gallium Nitride Materials and Devices II ; Conference date: 22-01-2007 Through 25-01-2007",
}