Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

S. J. Chang*, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, Cheng-Huang Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu

*此作品的通信作者

研究成果: Article同行評審

72 引文 斯高帕斯(Scopus)

摘要

The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.

原文English
頁(從 - 到)1002-1004
頁數3
期刊IEEE Photonics Technology Letters
16
發行號4
DOIs
出版狀態Published - 4月 2004

指紋

深入研究「Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact」主題。共同形成了獨特的指紋。

引用此