摘要
The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.
原文 | English |
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頁(從 - 到) | 1002-1004 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 16 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 4月 2004 |