Nitride-based green light-emitting diodes with high temperature GaN barrier layers

L. W. Wu; S. J. Chang; Y. K. Su; R. W. Chuang; T. C. Wen; Cheng-Huang Kuo; W. C. Lai; C. S. Chang; J. M. Tsai; J. K. Sheu

doi:10.1109/TED.2003.815150

Nitride-based green light-emitting diodes with high temperature GaN barrier layers

L. W. Wu^*, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, Cheng-Huang Kuo, W. C. Lai, C. S. Chang, J. M. Tsai, J. K. Sheu

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

25 引文斯高帕斯（Scopus）

摘要

High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700 °C to 950 °C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.

原文	English
頁（從 - 到）	1766-1770
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	8
DOIs	https://doi.org/10.1109/TED.2003.815150
出版狀態	Published - 8月 2003

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10.1109/TED.2003.815150

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@article{75fb91eda94f4a64bc756cf56fe158de,

title = "Nitride-based green light-emitting diodes with high temperature GaN barrier layers",

abstract = "High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700 °C to 950 °C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.",

keywords = "Green light-emitting diode (LED), InGaN-GaN, Multiple quantum well (MQW), Reliability",

author = "Wu, {L. W.} and Chang, {S. J.} and Su, {Y. K.} and Chuang, {R. W.} and Wen, {T. C.} and Cheng-Huang Kuo and Lai, {W. C.} and Chang, {C. S.} and Tsai, {J. M.} and Sheu, {J. K.}",

year = "2003",

month = aug,

doi = "10.1109/TED.2003.815150",

language = "English",

volume = "50",

pages = "1766--1770",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Nitride-based green light-emitting diodes with high temperature GaN barrier layers

AU - Wu, L. W.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Wen, T. C.

AU - Kuo, Cheng-Huang

AU - Lai, W. C.

AU - Chang, C. S.

AU - Tsai, J. M.

AU - Sheu, J. K.

PY - 2003/8

Y1 - 2003/8

N2 - High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700 °C to 950 °C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.

AB - High-quality InGaN-GaN multiquantum well (MQW) light-emitting diode (LED) structures were prepared by temperature ramping method during metalorganic chemical vapor deposition (MOCVD) growth. It was found that we could reduce the 20-mA forward voltage and increase the output intensity of the nitride-based green LEDs by increasing the growth temperature of GaN barrier layers from 700 °C to 950 °C. The 20-mA output power and maximum output power of the nitride-based green LEDs with high temperature GaN barrier layers was found to be 2.2 and 8.9 mW, respectively, which were more than 65% larger than those observed from conventional InGaN-GaN green LEDs. Such an observation could be attributed to the improved crystal quality of GaN barrier layers. The reliability of these LEDs was also found to be reasonably good.

KW - Green light-emitting diode (LED)

KW - InGaN-GaN

KW - Multiple quantum well (MQW)

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=0043028452&partnerID=8YFLogxK

U2 - 10.1109/TED.2003.815150

DO - 10.1109/TED.2003.815150

M3 - Article

AN - SCOPUS:0043028452

SN - 0018-9383

VL - 50

SP - 1766

EP - 1770

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Nitride-based green light-emitting diodes with high temperature GaN barrier layers

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