Nitride-based cascade near white light-emitting diodes

C. H. Chen; S. J. Chang; Y. K. Su; J. K. Sheu; J. F. Chen; Cheng-Huang Kuo; Y. C. Lin

doi:10.1109/LPT.2002.1012381

Nitride-based cascade near white light-emitting diodes

C. H. Chen^*, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, Cheng-Huang Kuo, Y. C. Lin

^*此作品的通信作者

照明與能源光電研究所

研究成果: Article › 同行評審

92 引文斯高帕斯（Scopus）

摘要

An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm² LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.

原文	English
頁（從 - 到）	908-910
頁數	3
期刊	IEEE Photonics Technology Letters
卷	14
發行號	7
DOIs	https://doi.org/10.1109/LPT.2002.1012381
出版狀態	Published - 7月 2002

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10.1109/LPT.2002.1012381

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@article{98d3000a74aa4e98b97e464957c36814,

title = "Nitride-based cascade near white light-emitting diodes",

abstract = "An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.",

keywords = "Cascade, EL, GaN, MQW, PL, White LED",

author = "Chen, {C. H.} and Chang, {S. J.} and Su, {Y. K.} and Sheu, {J. K.} and Chen, {J. F.} and Cheng-Huang Kuo and Lin, {Y. C.}",

year = "2002",

month = jul,

doi = "10.1109/LPT.2002.1012381",

language = "English",

volume = "14",

pages = "908--910",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Nitride-based cascade near white light-emitting diodes

AU - Chen, C. H.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Sheu, J. K.

AU - Chen, J. F.

AU - Kuo, Cheng-Huang

AU - Lin, Y. C.

PY - 2002/7

Y1 - 2002/7

N2 - An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.

AB - An InGaN-GaN blue light-emitting diode (LED) structure and an InGaN-GaN green LED structure were grown sequentially onto the same sapphire substrate so as to achieve a nitride-based near white LED. In order to avoid thyristor effect, we choose a large 2.1 × 2.1 mm2 LED chip size, which was six times larger than that of the normal LED. It was found that we could observe a near white light emission with commission international de l'Eclairage color coordinates x = 0.2 and y = 0.3, when the injection current was lower than 200 mA. It was also found that the output power, luminous efficiency and color temperature of such a cascade near white LED were 4.2 mW, 81 lm/W, and 9000 K, respectively.

KW - Cascade

KW - EL

KW - GaN

KW - MQW

KW - PL

KW - White LED

UR - http://www.scopus.com/inward/record.url?scp=0036648308&partnerID=8YFLogxK

U2 - 10.1109/LPT.2002.1012381

DO - 10.1109/LPT.2002.1012381

M3 - Article

AN - SCOPUS:0036648308

SN - 1041-1135

VL - 14

SP - 908

EP - 910

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

ER -

Nitride-based cascade near white light-emitting diodes

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