Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers

Y. K. Fu, Cheng-Huang Kuo*, C. J. Tun, L. C. Chang

*此作品的通信作者

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

GaN epitaxial layers and nitride-based light-emitting diodes (LEDs) structures with a conventional single low-temperature (LT) GaN buffer layer and multiple MgxNy/GaN buffer layers were prepared by metalorganic chemical vapor deposition. It was found that crystal quality of the GaN epilayer prepared on multiple MgxNy/GaN buffer layers was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the multiple MgxNy/GaN buffer layers, it was also found that 20 mA LED output power can be enhanced by 12%, as compared to the conventional LED. Such an enhancement in output power could be attributed to the reduction of threading dislocation induced nonradiative recombination centers using 12-pairs MgxNy/GaN buffer layers. Crown

原文English
頁(從 - 到)590-594
頁數5
期刊Solid-State Electronics
54
發行號5
DOIs
出版狀態Published - 1 五月 2010

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