Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm², the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.