Nitride-based blue LEDs with GaN/SiN double buffer layers

Cheng-Huang Kuo, S. J. Chang*, Y. K. Su, C. K. Wang, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, C. C. Lin

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

GaN epitaxial layers and nitride-based multiquantum well light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were prepared by metalorganic chemical vapor deposition. It was found that we could reduce defect density and thus improve crystal quality of the GaN epitaxial layers by using GaN/SiN double buffers. It was also found that we could use such a GaN/SiN double buffer to achieve more reliable nitride-based LEDs.

原文English
頁(從 - 到)2019-2022
頁數4
期刊Solid-State Electronics
47
發行號11
DOIs
出版狀態Published - 1 十一月 2003

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