@article{c0249fbef2b94872a882e63d29a9c635,
title = "Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step",
abstract = "A nitride-based asymmetric two-step light-emitting diode (LED) with In 0.08Ga0.92N shallow step was proposed and fabricated. It was found that the low indium content In0.08Ga0.92N layer can significantly enhance phase separation and/or inhomogeneous indium distribution in the active In0.27Ga0.73N layer. It was also found that we can enhance LED output power by a factor of 2.27 by simply inserting an In0.08Ga0.92N shallow step.",
keywords = "InGaN-GaN, Light-emitting diode (LED), Low indium composition, Single-quantum-well (SQW)",
author = "Cheng-Huang Kuo and Fu, {Y. K.} and Yeh, {C. L.} and Tun, {C. J.} and Chen, {P. H.} and Lai, {Wei Chih} and Chang, {Shoou Jinn}",
year = "2009",
month = mar,
day = "15",
doi = "10.1109/LPT.2008.2012118",
language = "English",
volume = "21",
pages = "371--373",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}