Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin; Chao Sung Lai; Chung Len Lee; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.790724

Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin, Chao Sung Lai, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

電子物理學系

研究成果: Article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

原文	English
頁（從 - 到）	248-249
頁數	2
期刊	Ieee Electron Device Letters
卷	16
發行號	6
DOIs	https://doi.org/10.1109/55.790724
出版狀態	Published - 6月 1995

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10.1109/55.790724

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abstract = "Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.",

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AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

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AB - Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

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Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

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