Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS

Yung Hao Lin, Chao Sung Lai, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF 2+ -implantation is proposed and demonstrated. The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.

原文English
頁(從 - 到)248-249
頁數2
期刊IEEE Electron Device Letters
16
發行號6
DOIs
出版狀態Published - 1 1月 1995

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