摘要
In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry.
原文 | English |
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頁(從 - 到) | 360-363 |
頁數 | 4 |
期刊 | Thin Solid Films |
卷 | 516 |
發行號 | 2-4 |
DOIs | |
出版狀態 | Published - 3 12月 2007 |