Nickel nanocrystals with Hf O2 blocking oxide for nonvolatile memory application

F. M. Yang*, T. C. Chang, Po-Tsun Liu, U. S. Chen, P. H. Yeh, Y. C. Yu, J. Y. Lin, S. M. Sze, J. C. Lou

*此作品的通信作者

研究成果: Article同行評審

65 引文 斯高帕斯(Scopus)

摘要

A distributed charge storage with Ni nanocrystals embedded in the Si O2 and Hf O2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5 nm and 3.9× 1012 cm2, respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1 V threshold voltage shift under 4 V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 106 write/erase cycles.

原文English
文章編號222104
頁數3
期刊Applied Physics Letters
90
發行號22
DOIs
出版狀態Published - 2007

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