@inproceedings{e9a5e63d1f0e4405943059dc53e7f8da,
title = "NH 3 plasma treatment for flash memory on poly-Si thin films",
abstract = "In this paper, we fabricated the poly-Si-Voxide-Vnitride-Voxide-Vsilicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.",
keywords = "Flash memories, NH3 Plasma, poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories, Polycrystalline-silicon thin-film transistor (poly-Si-TFT)",
author = "Lin, {Yu Hsien} and You, {Hsin Chiang} and Chou, {Jay Chi} and Chou, {Tung Huan} and Tien-Sheng Chao",
year = "2012",
month = jul,
day = "30",
doi = "10.1109/IS3C.2012.212",
language = "English",
isbn = "9780769546551",
series = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",
pages = "825--828",
booktitle = "Proceedings - 2012 International Symposium on Computer, Consumer and Control, IS3C 2012",
note = "null ; Conference date: 04-06-2012 Through 06-06-2012",
}