Next generation CMOS compact models for RF and microwave applications

Ali M. Niknejad*, Chinh Doan, Sohrab Emami, Mohan Dunga, Xuemei Xi, Jin He, Robert Brodersen, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. The Berkeley Wireless Research Center has demonstrated that standard 130nm CMOS technology is capable of operation up to 60 GHz, enabling a host of new mm-wave applications such as Gb/s WLAN and compact radar imaging. Will circuit design and compact modeling continue along the same course, or is a new microwave design methodology required? This paper will highlight the design and modeling challenges in moving up to these higher frequencies. A merger of RF and microwave design perspectives will be used to offer insight into the problem. The paper will discuss requirements for a next generation compact model to meet these challenges and offer potential solutions.

原文English
文章編號RMO2C-1
頁(從 - 到)141-144
頁數4
期刊Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium
DOIs
出版狀態Published - 2005
事件2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, 美國
持續時間: 12 6月 200514 6月 2005

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