New Ti-SALICIDE process using Sb and Ge preamorphization for sub-0.2 μm CMOS technology

Qiuxia Xu*, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

A new process for thin titanium self-aligned suicide (Ti-SALICIDE) on narrow n+ poly-Si lines and n+ diffusion layers using preamorphization implantation (PAI) with heavy ions of antimony (Sb) and germanium (Ge) has been demonstrated for application to 0.2-im CMOS devices and beyond. Preamorphization enhances the phase transformation from 49 TU Si to C54TISI2 and lowers the transformation temperature by 80 °C so that it occurs before conglomeration in narrow lines. Preamorphization by Sb and Ge implantation yields better results than that by As. The sheet resistance of TISI2 on heavily As doped poly-Si lines are 3.7 II/D and 3.8 II/D for the samples preamorphized by Ge and Sb implantations even with line width down to 0.2 fim. There is less leakage in the Ti-SALICIDE diode with preamorphization than without it. The probable reasons and mechanisms are discussed. Index Terms- MOSFET's, semiconductor device fabrication, semiconductor device ion implantation, silicon compounds.

原文English
頁(從 - 到)2002-2009
頁數8
期刊IEEE Transactions on Electron Devices
45
發行號9
DOIs
出版狀態Published - 1 十二月 1998

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