@inproceedings{9cf22711a961423c9194724f416c0d59,
title = "New proficient ferroelectric nanosheet line tunneling FETs with strained sige through scaled n-epitaxial layer",
abstract = "We for the first time report ferroelectric based nanosheet line-tunneling field effect transistors (FeNLTFETs) by scaled n-epitaxial layer with Si1-xGexas the source. The major engineering findings are shown by analyzing with physical governed factors to estimate the performance of FeNLTFETs. The line-tunneling mechanism with ferroelectric material (HZO) is properly tuned to improve the performance of ferroelectric line- TFETs. The suggested and simulated design is capable to deliver with the magnitude of Ion as 36.12 J.lA/J.lm, the impressive IOff of 94.31 aA/μm, and minimum and maximum subthreshold swings are of 3.75 mV/dec and 42.69 mV/dec, respectively. Notably, the estimated Ion/Ioff is in the orders of 1011 on the scaled epitaxial ferroelectric nanosheet line-TFET (SEFeNLTFET) structure by using Sio.6Geo.4 as source.",
keywords = "Ferroelectric (HZO), Line TFETs, N-epitaxy, Nanosheet, Si1-xGex",
author = "Narasimhulu Thoti and Yiming Li and Kola, {Sekhar Reddy} and Seiji Samukawa",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 20th IEEE International Conference on Nanotechnology, NANO 2020 ; Conference date: 29-07-2020 Through 31-07-2020",
year = "2020",
month = jul,
doi = "10.1109/NANO47656.2020.9183460",
language = "English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "319--322",
booktitle = "NANO 2020 - 20th IEEE International Conference on Nanotechnology, Proceedings",
address = "United States",
}