New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

Hsiao-Wen Zan; Hsiu Wen Hsueh; Shih Chin Kao; Wei Tsung Chen; Ming Che Ku; Wu Wei Tsai; Chuang Chuang Tsai; Hsin-Fei Meng

doi:10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

Hsiao-Wen Zan^*, Hsiu Wen Hsueh, Shih Chin Kao, Wei Tsung Chen, Ming Che Ku, Wu Wei Tsai, Chuang Chuang Tsai, Hsin-Fei Meng

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

8 引文斯高帕斯（Scopus）

摘要

We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.

原文	English
主出版物標題	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010
頁面	1316-1318
頁數	3
卷	41
版本	1
DOIs	https://doi.org/10.1889/1.3499931
出版狀態	Published - 5月 2010

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名字	48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

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10.1889/1.3499931

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Zan, H-W., Hsueh, H. W., Kao, S. C., Chen, W. T., Ku, M. C., Tsai, W. W., Tsai, C. C., & Meng, H-F. (2010). New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. 於 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 (1 編輯, 卷 41, 頁 1316-1318). (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010). https://doi.org/10.1889/1.3499931

Zan, Hsiao-Wen ; Hsueh, Hsiu Wen ; Kao, Shih Chin 等. / New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 卷 41 1. 編輯 2010. 頁 1316-1318 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).

@inproceedings{fb4fd125176b408b838b9626f6f0a024,

title = "New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array",

abstract = "We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.",

author = "Hsiao-Wen Zan and Hsueh, {Hsiu Wen} and Kao, {Shih Chin} and Chen, {Wei Tsung} and Ku, {Ming Che} and Tsai, {Wu Wei} and Tsai, {Chuang Chuang} and Hsin-Fei Meng",

year = "2010",

month = may,

doi = "10.1889/1.3499931",

language = "English",

volume = "41",

series = "48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010",

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Zan, H-W, Hsueh, HW, Kao, SC, Chen, WT, Ku, MC, Tsai, WW, Tsai, CC & Meng, H-F 2010, New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. 於 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1 edn, 卷 41, 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010, 頁 1316-1318. https://doi.org/10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. / Zan, Hsiao-Wen; Hsueh, Hsiu Wen; Kao, Shih Chin 等.
48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 卷 41 1. 編輯 2010. p. 1316-1318 (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010).

研究成果: Conference contribution › 同行評審

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AU - Zan, Hsiao-Wen

AU - Hsueh, Hsiu Wen

AU - Kao, Shih Chin

AU - Chen, Wei Tsung

AU - Ku, Ming Che

AU - Tsai, Wu Wei

AU - Tsai, Chuang Chuang

AU - Meng, Hsin-Fei

PY - 2010/5

Y1 - 2010/5

N2 - We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.

AB - We deposit a polymer layer (P3HT) on top of a-IGZO thin-film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT-capped device is about 30 times of that of standard device. These results are important for the development of in-cell integrated touch sensor in a -IGZO TFT array.

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M3 - Conference contribution

AN - SCOPUS:79953076798

VL - 41

T3 - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

SP - 1316

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BT - 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010

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Zan H-W, Hsueh HW, Kao SC, Chen WT, Ku MC, Tsai WW 等. New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array. 於 48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1 編輯卷 41. 2010. p. 1316-1318. (48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010). doi: 10.1889/1.3499931

New polymer-capped a-IGZO TFT with high sensitivity to visible light for the development of integrated touch sensor array

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