New patterning method for pentacene-based OTFTs by using AIN dielectric and O2 plasma treatment

Hsiao-Wen Zan, Ting Yuan Tu, Cheng Wei Chou, Kuo Hsi Yen, Chung Hwa Wang, Jenn Chang Hwang, Chen Chou Hsu, Kun Chih Lin, F. Y. Gan

研究成果: Conference contribution同行評審

摘要

Pentacene patterning on aluminum nitride (AIN) dielectric by adjusting the surface energy was discussed. By using conventional photo resist to protect the channel area, the surface energy of the remaining area was altered by the O 2 plasma treatment. Then, after pentacene deposition, water dipping was used to remove the pentacene on O2 plasma-treated area. The adhesion energy, intrusion energy were analyzed to explain the mechanism of this patterning process. The variation of intrusion energy due to different surface energies was found to be the key issue for successful pentacene patterning. AIN-OTFTs with the proposed pentacene patterning technology were also demonstrated.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面739-742
頁數4
出版狀態Published - 7月 2007
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
持續時間: 3 7月 20076 7月 2007

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區Taiwan
城市Taipei
期間3/07/076/07/07

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