New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation

Yu Cao*, Takashi Sato, Michael Orshansky, Dennis Sylvester, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

430 引文 斯高帕斯(Scopus)

摘要

A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input Leff, Tox, Vt, Rdsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18μm and 0.13μm technology nodes with Leff down to 70nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.

原文English
頁(從 - 到)201-204
頁數4
期刊Proceedings of the Custom Integrated Circuits Conference
DOIs
出版狀態Published - 1 一月 2000
事件CICC 2000: 22nd Annual Custom Integrated Circuits Conference - Orlando, FL, USA
持續時間: 21 五月 200024 五月 2000

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