New organic phototransistor with bias-modulated photosensitivity and bias-enhanced memory effect

Hsiao-Wen Zan*, Shih Chin Kao

*此作品的通信作者

研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)

摘要

A simple and effective method to adjust organic thin-film transistor photosensitivity was proposed. First, the full suppression of light-induced threshold-voltage shift was successfully demonstrated by applying negative gate bias during illumination. Then, the light-induced threshold-voltage shift that was modulated from 0 to 13.5 V was achieved by changing the drain and source bias from +15 to -15 V. Plausible mechanisms were proposed and verified. After light removal, the memory ability of the threshold-voltage shift was also greatly enhanced by the bias effect. The results demonstrate a sensitive organic phototransistor with memory ability by adjusting suitable bias conditions.

原文English
頁(從 - 到)721-723
頁數3
期刊IEEE Electron Device Letters
30
發行號7
DOIs
出版狀態Published - 8 6月 2009

指紋

深入研究「New organic phototransistor with bias-modulated photosensitivity and bias-enhanced memory effect」主題。共同形成了獨特的指紋。

引用此