New observation and analysis of layout dependent effects in sub-40nm multi-ring and multi-finger nmosfets for high frequency applications

Zu Cheng Li, Jyh-Chyurn Guo, Jinq Min Lin

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Multi-finger (MF) and multi-ring (MR) nMOSFETs were designed and fabricated in 40nm CMOS technology to explore the layout dependent effects in key device parameters and parasitic RC responsible for RF performance. For the first time, the experimental proves the advantages of MR nMOSFETs, such as the increase of effective mobility (\mu-{\mathrm{eff}}), transconductance (\mathrm{g}-{\mathrm{m}}), and channel current (\mathrm{I}-{\mathrm{DS}}), and smaller parasitic source resistance (\mathrm{Rs}), all of which are in favor of higher speed and higher frequency. However, the undesired increase of 3-D fringing capacitances may bring a critical trade-off influencing high frequency performance. In this paper, new observation and in-depth analysis of the complicated layout dependent effects can facilitate the device layout optimization in the right direction for RF and mm-wave design and applications.

原文American English
主出版物標題2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728109428
DOIs
出版狀態Published - 4月 2019
事件2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan
持續時間: 22 4月 201925 4月 2019

出版系列

名字2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
國家/地區Taiwan
城市Hsinchu
期間22/04/1925/04/19

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