摘要
In this method, chopped light that may be broadband and of unknown but constant intensity is incident from the bulk side of the test cell. The photocurrent, I is measured as a function of the effective bulk thickness of the cell, which is varied by varying the junction reverse bias. The diffusion length and the surface recombination velocity of the bulk material can be deduced from the data directly - without curve fitting. The effective surface recombination velocity at an oxidized silicon surface can be varied by applying a bias voltage to a transparent gate electrode. The recombination velocity can exhibit a maximum when the surface is depleted.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 596-600 |
| 頁數 | 5 |
| 期刊 | Conference Record of the IEEE Photovoltaic Specialists Conference |
| 出版狀態 | Published - 1 1月 1980 |
| 事件 | Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA 持續時間: 7 1月 1980 → 10 1月 1980 |