New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

Y. T. Lin, P. Y. Chiang, C. S. Lai, Steve S. Chung, George Chou, C. T. Huang, Paul Chen, C. H. Chu, C. C.H. Hsu

    研究成果同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    In this paper, the ONO layer scaling effect and the leakage components in a SONOS cell have been extensively studied. The reliability with focus on both endurance and data retention has been demonstrated. Result show that thinner blocking oxide has better endurance, while it has poorer data retention. For the data retention before cycling, thermionic and direct tunneling, in relating to the data loss, are the two dominant leakage components, which can be separated. Moreover, after cycling, we have been able to separate another third component-the trap-to-trap tunneling current. These results are useful toward an understanding of the leakage mechanisms of SONOS cell as well as the scaling effect of ONO layers.

    原文English
    頁面239-242
    頁數4
    DOIs
    出版狀態Published - 7月 2004
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣
    持續時間: 5 7月 20048 7月 2004

    Conference

    ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家/地區台灣
    期間5/07/048/07/04

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