By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.
|頁（從 - 到）||37-40|
|期刊||International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|出版狀態||Published - 1 1月 2001|