New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin; D. Y. Lee; C. Y. Lee; Tien-Sheng Chao; T. Y. Huang; Ta-Hui Wang

doi:10.1109/VTSA.2001.934477

New insights into breakdown modes and their evolution in ultra-thin gate oxide

Horng-Chih Lin, D. Y. Lee, C. Y. Lee, Tien-Sheng Chao, T. Y. Huang, Ta-Hui Wang

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

By carefully analyzing post-breakdown current-voltage characteristics of MOS devices, it was found that soft-breakdown mode typically induced in devices with oxide thinner than 3 nm is quite different from that with oxide thicker than 3 nm. Based on our findings, an unified model is proposed to explain the evolution of different breakdown modes. Impacts of each breakdown on device's switching behavior are also discussed.

原文	English
頁（從 - 到）	37-40
頁數	4
期刊	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.2001.934477
出版狀態	Published - 1 1月 2001

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10.1109/VTSA.2001.934477

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New insights into breakdown modes and their evolution in ultra-thin gate oxide

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