摘要
A new GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diode (TBIT) is proposed and demonstrated. A peak-current density as high as 7-2kA/cm2 and a peak-to-valley-current ratio of 10 at room temperature were exhibited. In this device resonant tunnelling effects occur for both the electron in the InAs conduction band and the light hole in the GaSb conduction band through the AlSb/GaSb/AlSb/InAs/AlSb triple-barrier structure. The tunnelling process is greatly diminished, indicating the quantisation effect for both electrons and light holes by narrowing the InAs well and the GaSb well. This triple-barrier structure is the first demonstrated tunnelling structure which utilises the resonant tunnelling effect of both electrons and holes.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 1277-1279 |
| 頁數 | 3 |
| 期刊 | Electronics Letters |
| 卷 | 26 |
| 發行號 | 16 |
| DOIs | |
| 出版狀態 | Published - 1 9月 1990 |