New findings on low frequency noise and mismatching properties in uniaxial strained PMOSFETs

Jack J.Y. Kuo, William P.N. Chen, Pin Su

    研究成果: Conference contribution同行評審

    摘要

    We report new findings on the intrinsic effect of uniaxial strain on low frequency noise and device mismatch in nanoscale pMOSFETs. Our study indicates that the low frequency noise and mismatching properties of the strained device are altered by the tunneling attenuation length, mobility fluctuation, and the critical electric field at which the carrier velocity becomes saturated.

    原文English
    主出版物標題ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
    頁面327-330
    頁數4
    DOIs
    出版狀態Published - 2009
    事件39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, 希臘
    持續時間: 14 9月 200918 9月 2009

    出版系列

    名字ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

    Conference

    Conference39th European Solid-State Device Research Conference, ESSDERC 2009
    國家/地區希臘
    城市Athens
    期間14/09/0918/09/09

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