New fabrication technology of fin field effect transistors using neutral-beam etching

Kazuhiko Endo*, Shuichi Noda, Takuya Ozaki, Seiji Samukawa, Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Hidenori Takashima, Etsuro Sugimata, Takashi Matsukawa, Hiromi Yamauchi, Yuki Ishikawa, Eiichi Suzuki

*此作品的通信作者

研究成果: Review article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Ultrathin-channel formation of a vertical-type double-gate metal oxide semiconductor field effect transistor using a low-energy neutral-beam etching (NBE) is proposed. The NBE can completely eliminate charge buildup and photon radiation damage from the plasma. By optimizing NBE conditions, rectangular vertical channels were fabricated with a SiO2 hard mask under low-energy NBE conditions.

原文English
頁(從 - 到)5513-5516
頁數4
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號6 B
DOIs
出版狀態Published - 20 6月 2006

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