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New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices
S. J. Chen
*
, C. C. Lin, Steve S. Chung,
Horng-Chih Lin
*
此作品的通信作者
電子研究所
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:
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引文 斯高帕斯(Scopus)
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Keyphrases
Charge Plasma
100%
CMOS Devices
100%
Surface Channel
100%
Hot Carrier Effect
100%
Edge Damage
100%
Plasma Etching
33%
Polysilicon
33%
Spatial Distribution
33%
Interface States
33%
NMOSFET
33%
PMOSFET
33%
Charge Pump
33%
Device Degradation
33%
High Density
33%
Plasma Process
33%
4-phase
33%
Drain Regions
33%
Phase Boundary
33%
Damage Mechanism
33%
Profiling Techniques
33%
Two-peak
33%
Scaled Device
33%
Antenna Structure
33%
Damage Effect
33%
Plasma Edge
33%
Engineering
Carrier Effect
100%
Interface State
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Antenna
50%
Plasma Process
50%
Drain Region
50%
Damage Mechanism
50%
Spatial Distribution
50%
Material Science
Hot Carrier
100%
Surface (Surface Science)
100%
Density
50%
Silicon
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Plasma Etching
50%