New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

Ming-Dou Ker; Kuo Chun Hsu

New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

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研究成果: Paper › 同行評審

摘要

A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

原文	English
頁面	841-844
頁數	4
出版狀態	Published - 12月 2004
事件	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan 持續時間: 6 12月 2004 → 9 12月 2004

Conference

Conference	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
國家/地區	Taiwan
城市	Tainan
期間	6/12/04 → 9/12/04

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Link to publication in Scopus

引用此

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title = "New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology",

abstract = "A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.",

author = "Ming-Dou Ker and Hsu, {Kuo Chun}",

year = "2004",

month = dec,

language = "English",

pages = "841--844",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

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AU - Ker, Ming-Dou

AU - Hsu, Kuo Chun

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N2 - A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

AB - A new design concept for on-chip electrostatic discharge (BSD) protection circuits with the already-on device is proposed to provide efficient BSD protection for ICs in nanoscale CMOS technologies. The already-on device used in this work is the native-NMOS-triggered SCR (NANSCR) device, which has a trigger voltage of almost zero in a 130-nm CMOS process. The already-on NANSCR has the lowest trigger voltage, smaller turn-on resistance, lower holding voltage, faster turn-on speed, and higher BSD level than those of traditional design.

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T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

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ER -

New design concept for on-chip ESD protection circuits with already-on device in nanoscale CMOS technology

摘要

Conference

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