TY - JOUR
T1 - New curvature-compensation technique for cmos bandgap reference with sub-1-v operation
AU - Ker, Ming-Dou
AU - Chen, Jung Sheng
AU - Chu, Ching Yun
PY - 2005/12/1
Y1 - 2005/12/1
N2 - A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.
AB - A new sub-1-V curvature-compensated CMOS bandgap reference, which utilizes the temperature-dependent currents generated from the parasitic NPN and PNP BJT devices in CMOS process, is presented. The new proposed sub-1-V curvature-compensated CMOS bandgap reference has been successfully verified in a standard 0.25-μm CMOS process. The experimental results have verified that, at the minimum supply voltage of 0.9 V, the output reference voltage is 536.7 mV with a temperature coefficient of 19.55 ppm/°C from 0 °C to 100 °C. With 0.9-V supply voltage, the measured power noise rejection ratio is -25.5 dB at 10 kHz.
UR - http://www.scopus.com/inward/record.url?scp=33748563341&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2005.1465473
DO - 10.1109/ISCAS.2005.1465473
M3 - Conference article
AN - SCOPUS:33748563341
SN - 0271-4310
SP - 3861
EP - 3864
JO - Proceedings - IEEE International Symposium on Circuits and Systems
JF - Proceedings - IEEE International Symposium on Circuits and Systems
M1 - 1465473
T2 - IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005
Y2 - 23 May 2005 through 26 May 2005
ER -