Advances in plasma-process technology have contributed directly to advances in the miniaturization and integration of semiconductor devices. As semiconductor devices reach the nanoscale domain, however, defects or damage can be caused by charged particles and ultraviolet (UV) rays emitted from the plasma, severely impairing the characteristics of nanodevices that have a larger surface than a comparable bulk material. Therefore, it is essential to develop methods for suppressing or controlling charge accumulation and UV damage in plasma processing. The neutral-beam (NB) process I developed suppresses the formation of defects at the atomic-layer level on the processed surface, allowing ideal surface chemical reactions to take place at room temperature. It is indispensable for creating future innovative nanodevices.